The Supertex VN2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Cha.
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► High input impedance and high gain
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VN2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabili.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN2106NF |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
2 | VN21 |
STMicroelectronics |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
3 | VN2110 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
4 | VN2110 |
Microchip |
N-Channel Vertical DMOS FET | |
5 | VN2110NF |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
6 | VN21SP |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
7 | VN2010L |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
8 | VN2010L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
9 | VN2010L |
Vishay Siliconix |
N-Channel 200-V (D-S) MOSFETs | |
10 | VN2010L |
TEMIC |
N-Channel Enhancement-Mode MOS Transistors | |
11 | VN2020L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
12 | VN20AN |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY |