u OThe VN21 is a monolithic device made using d -STMicroelectronics VIPower Technology, ro )intended for driving resistive or inductive loads P t(swith one side grounded. te cBuilt-in thermal shut-down protects the chip from le uover temperature and short circuit. dThe open drain diagnostic output indi.
Figure 1. Package
Type
VDSS
RDS(on)
In (1)
VCC
VN21
60 V 0.05 Ω 7 A
26 V
)Note: 1. In= Nominal current according to ISO definition for high t(sside automotive switch. The Nominal Current is the
current at Tc = 85 °C for battery voltage of 13V which produces a voltage drop of 0.5 V.
duc
■ MAXIMUM CONTINUOUS OUTPUT ro )CURRENT (note 2): 23 A @ Tc= 85°C P t(s
■ 5V LOGIC LEVEL COMPATIBLE INPUT lete uc
■ THERMAL SHUT-DOWN d
■ UNDER VOLTAGE PROTECTION so ro
■ OPEN DRAIN DIAGNOSTIC OUTPUT b P
■ INDUCTIVE LOAD FAST DEMAGNETIZATION - O te
■ VERY LOW STAND-BY POWER ) leDISSIPATION
ct(s bsoDESCRIPTI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN2010L |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
2 | VN2010L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
3 | VN2010L |
Vishay Siliconix |
N-Channel 200-V (D-S) MOSFETs | |
4 | VN2010L |
TEMIC |
N-Channel Enhancement-Mode MOS Transistors | |
5 | VN2020L |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
6 | VN20AN |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
7 | VN20N |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
8 | VN2106 |
Supertex Inc |
N-Channel Vertical DMOS FETs | |
9 | VN2106NF |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
10 | VN2110 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
11 | VN2110 |
Microchip |
N-Channel Vertical DMOS FET | |
12 | VN2110NF |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |