N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – FEB 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω VN10LP D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 270 3 ± 20 625 -55 to +150 UNIT V mA A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = .
* 60 Volt VDS
* RDS(on)=5Ω
VN10LP
D G
S
REFER TO ZVN3306A FOR GRAPHS
E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 270 3 ± 20 625 -55 to +150 UNIT V mA A V mW °C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb = 25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb = 25°C Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN10LE |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
2 | VN10LF |
Zetex Semiconductors |
N-Channel Enhancement Mode Vertical DMOS FET | |
3 | VN10LLS |
Vishay Siliconix |
N-Channel 60-V (D-S) MOSFETs | |
4 | VN10LM |
Siliconix |
N-Channel Enhancement-Mode MOS Transistors | |
5 | VN10LM |
Motorola |
TMOS FET Transistor | |
6 | VN10LM |
Calogic LLC |
N-Channel Enhancement-Mode MOS Transistors | |
7 | VN10LM |
ETC |
N CHANNEL ENHANCEMENT MODE D MOS POWER FETS | |
8 | VN100D |
Siliconix |
(VN1xxD) MOSPOWER | |
9 | VN100x |
Siliconix |
(VN1xxD) MOSPOWER | |
10 | VN1015 |
Cherry |
MAGNETIC SENSOR | |
11 | VN10K |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
12 | VN10K |
Microchip |
N-Channel Vertical DMOS FET |