VN10LE - Siliconix

VN10LE N-Channel Enhancement-Mode MOS Transistors

..L:IrISiinlciocrpoorna.itexd VN0610LL, VN10LE, VN10LM N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (n) (A) PACKAGE TO-206AC (TO-52) BOTTOM VIEW VN0610LL 60 5 0.28 TO-92 VN10LE 60 5 0.38 TO-206AC VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 (See Section 7) TO-237 BOTTOM VIEW 1 S.

Features

300 THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL VN0610LL VN10LE Junction-to-Ambient RthJA 156 400 1 Pulse width limited by maximum junction temperature 2Reference case for all temperature testing VN10LM UNITS 125 °C/W 6-71 VN0610LL, VN10LE, VN10LM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGS = 0 V, 10 = 100JJ.A Vos = VGs, 10 = 1 mA Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 4 Drain-Source On-Reslstance3 ~~~~;6~nductance 3 Common Source Output Cond.