The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) .
ply Voltage Status Current Electrostatic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Temperature o Valu e 60 13 -13 ± 10 -4 ± 10 2000 56 -40 to 150 -55 to 150 Unit V A A mA V mA V W o o C C CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 VN05NSP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max 2.2 50 o o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise sp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN05N |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VN0535 |
Supertex |
N-Channel MOSFET | |
3 | VN0540 |
Supertex |
N-Channel MOSFET | |
4 | VN0545 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
5 | VN0550 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | VN0550 |
Microchip |
N-Channel Vertical DMOS FET | |
7 | VN05D |
Supertex |
N-Channel MOSFET | |
8 | VN05E |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | VN05H |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
10 | VN05HSP |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |