The VN05HSP is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circui.
s) Supply Voltage (pulsed) Reverse Supply Voltage Status Current Electrostat ic Discharge (1.5 k Ω, 100 pF) Power Dissipation at T c ≤ 25 C o Parameter Drain-Source Breakdown Voltage Value Internally Clamped 12 -12 ± 10 40 60 -4 ± 10 2000 52 -40 to 150 -55 to 150 350 Unit V A A mA V V V mA V W o o Junction Operating Temperat ure Storage Temperature Power Mos Avalanche Energy C C mJ CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/8 VN05HSP THERMAL DATA R thj-ca se Rt hj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.4 62.5 o o C/W C/W ELECTR.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VN05H |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
2 | VN0535 |
Supertex |
N-Channel MOSFET | |
3 | VN0540 |
Supertex |
N-Channel MOSFET | |
4 | VN0545 |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
5 | VN0550 |
Supertex Inc |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | VN0550 |
Microchip |
N-Channel Vertical DMOS FET | |
7 | VN05D |
Supertex |
N-Channel MOSFET | |
8 | VN05E |
Supertex |
N-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | VN05N |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
10 | VN05NSP |
STMicroelectronics |
HIGH SIDE SMART POWER SOLID STATE RELAY | |
11 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
12 | VN0104N2 |
Supertex |
Understanding MOSFET |