The VFT80-28 is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG .112 x 45° A FEATURES: B • PG = 10 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ Metalization System F S G C D E D S Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O O I GH 7..
B
• PG = 10 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
F
S G
C D E
D S
Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC
O O
I GH
7.0 A 60 V 60 V ± 20 V 100 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.8 OC/W
O O
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10704
NONE
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT4045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | VFT4045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | VFT4045C-M3 |
Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VFT4060C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
5 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | VFT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VFT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | VFT1045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VFT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | VFT1060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT1060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VFT1080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |