The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 13.5 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System S D Ø.125 NOM. C B G E H D G F S I J K MAXIMUM RATINGS DIM MINIMUM inche.
• PG = 13.5 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
S
D
Ø.125 NOM.
C B
G
E H D G F
S
I J
K
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
ID VDSS VGS PDISS TJ T STG θ JC
16 A 125 V ± 30 V 300 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.6 OC/W
O O O
A B C D E F G H I J K L
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VFT150-28 |
Advanced Semiconductor |
VHF POWER MOSFET Channel Enhancement Mode | |
2 | VFT15-12 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
3 | VFT15-28 |
Advanced Semiconductor |
VHF POWER MOSFET N-Channel Enhancement Mode | |
4 | VFT10200C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | VFT10200C-E3 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | VFT1045BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | VFT1045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VFT1045CBP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | VFT1060C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VFT1060C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VFT1080C |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier | |
12 | VFT1080S |
Vishay |
Trench MOS Barrier Schottky Rectifier |