VBQF2311 - VBsemi

VBQF2311 P-Channel MOSFET

VBQF2311 www.VBsemi.com P-Channel 30-V (D-S) MOSFET VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID -30 V 9 mΩ 17 mΩ -30 A DFN 3x3 EP Top View Bottom View Pin 1 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested APPLICATIONS • Notebook battery charging • Notebook adapter switch S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET ABS.

Features

• TrenchFET® power MOSFET
• 100 % Rg and UIS tested APPLICATIONS
• Notebook battery charging
• Notebook adapter switch S Top View 1 8 2 7 3 6 4 5 G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissip.