VBQA1302 - VBsemi

VBQA1302 N-Channel MOSFET

VBQA1302 N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0018 at VGS = 10 V 0.0025 at VGS = 4.5 V ID (A)a, e 160 130 Qg (Typ.) 82 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • OR-ing • Server Top View DFN5X6 Bottom View Top View 1 8 2 7 3 6 4 5 D G PIN1 S N-Channel .

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• OR-ing
• Server Top View DFN5X6 Bottom View Top View 1 8 2 7 3 6 4 5 D G PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C ID TA = 25 °C TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C TC = 25 °C Maximum Power D.