www.vishay.com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.31 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low fo.
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1 Anode 2
K Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM
160 A
VF at IF = 20 A (TA = 125 °C) TOP max. (AC model)
0.50 V 150 °C
TJ max. (DC forward current)
200 °C
Package
SMPD (T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V20DL45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V20DL45-M3 |
Vishay |
Low-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V20DL45HM3 |
Vishay |
Low-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V20D100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V20D170C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V20D202C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V20D45C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | V20D60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | V20DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | V20DM120 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | V20DM120C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V20DM120C-M3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |