www.vishay.com V20D100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5.0 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for aut.
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V20D170C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V20D202C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V20D45C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | V20D60C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V20DL45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V20DL45-M3 |
Vishay |
Low-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V20DL45BP |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | V20DL45HM3 |
Vishay |
Low-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | V20DM100C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | V20DM120 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | V20DM120C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V20DM120C-M3 |
Vishay |
Dual Trench MOS Barrier Schottky Rectifier |