www.vishay.com V12PM12-M3, V12PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 6 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MO.
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 12 A TJ max. Package
12 A 120 V 160 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V12PM12 |
Vishay |
High Current Density Surface-Mount Rectifier | |
2 | V12PM12-M3 |
Vishay |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | |
3 | V12PM10 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
4 | V12PM15 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
5 | V12PM45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
6 | V12PM6 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
7 | V12P10 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
8 | V12P12 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
9 | V12P15 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
10 | V12P45 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
11 | V12P6 |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
12 | V12P8 |
Vishay |
Trench MOS Barrier Schottky Rectifier |