V12P45 - Vishay

V12P45 Trench MOS Barrier Schottky Rectifier

www.vishay.com V12P45 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 6 A eSMP® Series K 1 2 SMPC (TO-277A) K Anode 1 Cathode Anode 2 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automa.

Features

• Very low profile - typical height of 1.1 mm Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(.