V10PM12 - Vishay

V10PM12 Trench MOS Barrier Schottky Rectifier

www.vishay.com V10PM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started FEATURES • Very low profile - typical height of 1.1 mm Available • Trench .

Features

• Very low profile - typical height of 1.1 mm Available
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. Models Available PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 120 V IF.