V10PM12-M3 - Vishay

V10PM12-M3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

www.vishay.com V10PM12-M3, V10PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MO.

Features

• Very low profile - typical height of 1.1 mm Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 120 V 160 .