UTT50N06L-TN3 - INCHANGE

UTT50N06L-TN3 N-Channel MOSFET

Isc N-Channel MOSFET Transistor UTT50N06L-TN3 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VD.

Features

·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 50 35 200 PD Total Dissipation @TC=25℃ 114 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHA.