Isc N-Channel MOSFET Transistor UTT50N06L-TA3 ·FEATURES ·With To-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Dr.
·With To-220 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
50 35
200
PD
Total Dissipation @TC=25℃
100
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UTT50N06L-TN3 |
INCHANGE |
N-Channel MOSFET | |
2 | UTT50N06 |
UTC |
N-CHANNEL MOSFET | |
3 | UTT50N06H |
UTC |
N-CHANNEL FAST SWITCHING MOSFET | |
4 | UTT50N06M |
UTC |
N-CHANNEL MOSFET | |
5 | UTT50N03L |
UTC |
N-CHANNEL POWER MOSFET | |
6 | UTT50N05 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | UTT50P04 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
8 | UTT50P06 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
9 | UTT50P10 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
10 | UTT50P10-H |
UTC |
P-CHANNEL POWER MOSFET | |
11 | UTT08N02Z-F |
UTC |
20V N-CHANNEL POWER MOSFET | |
12 | UTT100N05 |
Unisonic Technologies |
50V N-CHANNEL POWER MOSFET |