The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications. FEATURES * RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A * Low on-state resistance * Built-in .
* RDS(ON) ≤ 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) ≤ 150 mΩ @ VGS=4.5V, ID=7.5A
* Low on-state resistance
* Built-in gate protection diode
* High Switching Speed
* High Power and Current Handling Capability
SYMBOL
2.Drain
1 1
Power MOSFET
TO-220 TO-251 TO-252
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT15N10L-TA3-T
UTT15N10G-TA3-T
UTT15N10L-TM3-T
UTT15N10G-TM3-T
UTT15N10L-TN3-R
UTT15N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-251 TO-252
Pin Assignment 123 GD S GD S GD S
Packing
Tube Tube Tape Reel
UTT15N10G-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UTT150N03 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
2 | UTT150N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
3 | UTT15P06 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
4 | UTT15P10 |
UTC |
N-CHANNEL POWER MOSFET | |
5 | UTT100N05 |
Unisonic Technologies |
50V N-CHANNEL POWER MOSFET | |
6 | UTT100N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
7 | UTT100N08 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
8 | UTT100N75H |
UTC |
N-CHANNEL MOSFET | |
9 | UTT100P03 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET | |
10 | UTT108N03 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | UTT10N10 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
12 | UTT10NP06 |
UTC |
N-CHANNEL / P-CHANNEL Power MOSFET |