UTT108N03 - Unisonic Technologies

UTT108N03 N-CHANNEL POWER MOSFET

Power MOSFET As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. 1 „ FEATURES TO-220 * RDS(ON) = 6.0mΩ @VGS = 10V * Low Capacitance * Optimized Gate Charge * Fast Switc.

Features

TO-220
* RDS(ON) = 6.0mΩ @VGS = 10V
* Low Capacitance
* Optimized Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified „ SYMBOL 2.Drain 1.Gate www.DataSheet.net/ 3.Source „ ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free UTT108N03L-TA3-T UTT108N03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-696.A Datasheet pdf - http://www.DataSheet4U.co.kr/ UTT108N03 „ ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise.