UTT12NN10 - UTC

UTT12NN10 DUAL N-CHANNEL POWER MOSFET

The UTC UTT12NN10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low Rdson characteristic by high cell density trench technology.  FEATURES * RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8 1 PDFN3×3  ORDERING INFORMATION Ordering Number Lead.

Features

* RDS(ON) ≤ 0.28 Ω @ VGS=10V, ID=2.0A
* Fast Switching Speed
* Simple Drive Requirement
 SYMBOL Power MOSFET SOP-8 1 PDFN3×3
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT12NN10L-S08-R UTT12NN10G-S08-R SOP-8 UTT12NN10L-P3030-R UTT12NN10G-P3030-R PDFN3×3 Note: Pin Assignment: G: Gate D: Drain S: Source 1 Pin Assignment 234567 8 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-196.D UTT12NN10
 MARKING SOP-8 Power MOSFET PDFN3×3 UNISONI.