USG40N10 - UTC

USG40N10 N-CHANNEL POWER MOSFET

The UTC USG40N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG40N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits.  FEATURES * RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=20A RDS(.

Features

* RDS(ON) ≤ 16 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 28 mΩ @ VGS=4.5V, ID=10A
* High Frequency Switching
* Synchronous Rectification 1 TO-220 1 PDFN5×6 1 TO - 252 1 PDFN3×3
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USG40N10L-TA3-T USG40N10G-TA3-T TO-220 USG40N10L-TN3-R USG40N10G-TN3-R TO-252 USG40N10L-P3030-R USG40N10G-P3030-R PDFN3×3 USG40N10L-P5060-R USG40N10G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing G D S - - - - - Tube G D S - - - - - Tape Reel S S S G D D D D Tape Reel S S S G D .