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The UTC USG085R035H-T is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG085R035H-T is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency circuits. FEATURES * RDS(ON) ≤ 3.5 mΩ @ VGS=10V, .
* RDS(ON) ≤ 3.5 mΩ @ VGS=10V, ID=50A
* High Switching Speed
SYMBOL
1 PDFN5×6
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
USG085R035HL-P5060-R USG085R035HG-P5060-R PDFN5×6
Note: Pin Assignment: S: Source
G: Gate D: Drain
Pin Assignment 12345678
Packing
S S S G D D D D Tape Reel
MARKING
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1 of 5
QW-R209-479.a
USG085R035H-T
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
85
V
Gate.
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