www.DataSheet4U.com SF10G48,SF10J48,USF10G48,USF10J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G48,SF10J48,USF10G48,USF10J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V l Repetitive Peak Reverse Voltage l Average On−State Current l Gate Trigger Current SF10G48·SF10J48 : VRRM = 400,600V : IT (AV) = 10A : IGT = 1.
Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 10 16 160 (50Hz) 176 (60Hz) 125 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Note 1: VDRM = 0.5 × Rated, ITM ≤ 30A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Rep.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | USF10G48 |
Toshiba Semiconductor |
Thyristor | |
2 | USF10G48 |
INCHANGE |
Thyristor | |
3 | USF1A101MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
4 | USF1A151MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
5 | USF1A221MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
6 | USF1A330MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
7 | USF1A470MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
8 | USF1A680MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
9 | USF1C101MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
10 | USF1C151MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
11 | USF1C221MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
12 | USF1C330MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS |