NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI. PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD2118 is a single +5V power supply, 16384 word by 1 bit Dynamic MOS RAM. The IlPD2118 achieves high speed with low power dissipation by the use of single tran· sistor dynamic storage cell design and advanced dynam.
• Single+5VSupply,±10%Tolerance
• Low Power: 138 mW Max Operating
16 mW Max Standby
• Low VDD Current Transients
• All Inputs, Including Clocks, TTL Compatible
•
• Non
·Latched Output is Three
·State
• RAS
·Only
·Refresh
• 128 Refresh Cycles Required
• Page Mode Capability
• CAS Controlled Output Allows Hidden Refresh
PIN
IlPD2118 IlPD2118
·2 IlPD2118
·3
ACCESS TIME 150 ns 120 ns 100 r1'S
RIW CYCLE 320 ns 270 ns 235 ns
RMWCYCLE 410 ns 345 ns 295 ns
PIN CONFIGURATION
NC
DIN
WE RAS
AO
A2
Al
Vss
CAS
DOUT A6 A3 A4 AS NC
An
·All CAS
DIN DOUT WE RAS VDD, Vss
PIN NAMES
ADDRESS INPUTS COLUMN ADD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD2114L |
NEC |
4K-Bit Static RAM | |
2 | UPD2114L-1 |
NEC |
4K-Bit Static RAM | |
3 | UPD2114L-2 |
NEC |
4K-Bit Static RAM | |
4 | UPD2114L-3 |
NEC |
4K-Bit Static RAM | |
5 | UPD2114L-5 |
NEC |
4K-Bit Static RAM | |
6 | UPD2118-2 |
NEC |
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY | |
7 | UPD2118-3 |
NEC |
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY | |
8 | UPD2101AL |
NEC Electronics |
1K-Bit Static MOS RAM | |
9 | UPD2101AL-2 |
NEC |
1K-Bit Static MOS RAM | |
10 | UPD2101AL-4 |
NEC |
1K-Bit Static MOS RAM | |
11 | UPD2102AL |
NEC Electronics |
1K-Bit Fully Decoded Static MOS RAM | |
12 | UPD2102AL-2 |
NEC |
1K-Bit Fully Decoded Static MOS RAM |