4098 BIT (1024 )( 4 BITS) STATIC RAM The NEC I.lPD2114L is a 4096 bit static Random Access Memory organized as 1024 words by 4 bits using N-channeISilicon-gate MOS technology_ It uses fully DC stable (static) circuitry throughout, in both the array and the decoding_ It therefore requires no clocks or refreshing to operate and simplifies system design. The d.
• Access Time: Selection from 150-450 ns
• Single +5 Volt Supply
• Directly TTL Compatible - All Inputs and Outputs
• Completely Static - No Clock or Timing Strobe. Required
• Low Operating Power - Typically 0.06 mW/8it
• Identical Cycle and Access Times
• Common Data Input and Output using Three-State Output
• High Density 18-pin Plastic and Ceramic Packages
• Replacement for 2114L and Equivalent Devices
PIN CONFIGURATION A6
Vee
A5
A7
A4
AS
A3
Ag
Ao
1/0,
A,
1102
A2
1/03
IT
1/0 4
GND
WE
PIN NAMES
AO
·Ag
Address Inputs
WE es 110,-1/04
Write Enable ehip Select Data Input/O.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD2114L-1 |
NEC |
4K-Bit Static RAM | |
2 | UPD2114L-2 |
NEC |
4K-Bit Static RAM | |
3 | UPD2114L-3 |
NEC |
4K-Bit Static RAM | |
4 | UPD2114L |
NEC |
4K-Bit Static RAM | |
5 | UPD2118 |
NEC |
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY | |
6 | UPD2118-2 |
NEC |
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY | |
7 | UPD2118-3 |
NEC |
16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY | |
8 | UPD2101AL |
NEC Electronics |
1K-Bit Static MOS RAM | |
9 | UPD2101AL-2 |
NEC |
1K-Bit Static MOS RAM | |
10 | UPD2101AL-4 |
NEC |
1K-Bit Static MOS RAM | |
11 | UPD2102AL |
NEC Electronics |
1K-Bit Fully Decoded Static MOS RAM | |
12 | UPD2102AL-2 |
NEC |
1K-Bit Fully Decoded Static MOS RAM |