The μ PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • 2.5 V drive available • Low on-state resistance ⎯ RDS(on)1 = 21.5 mΩ MAX. (VGS .
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Features
• 2.5 V drive available
• Low on-state resistance
⎯ RDS(on)1 = 21.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 26.5 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
Ordering Information
Part No. μ PA2462T1Q-E1-AX ∗1
LEAD PLATING Ni/Pd/Au
PACKING 8 mm embossed taping
Package 8-pin HUSON (2720)
30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2460T1Q |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2461T1Q |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2463T1Q |
Renesas |
MOSFET | |
4 | UPA2464T1Q |
Renesas |
MOSFET | |
5 | UPA2465T1Q |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | UPA2450 |
NEC |
N-Channel MOSFET | |
7 | UPA2450B |
NEC |
N-Channel MOSFET | |
8 | UPA2450C |
NEC |
N-Channel MOSFET | |
9 | UPA2451 |
NEC |
N-Channel MOSFET | |
10 | UPA2451B |
NEC |
N-Channel MOSFET | |
11 | UPA2451C |
NEC |
N-Channel MOSFET | |
12 | UPA2452 |
NEC |
N-Channel MOSFET |