UPA2460T1Q - Renesas

UPA2460T1Q MOS FIELD EFFECT TRANSISTOR

The μ PA2460T1Q is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2460T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features • 2.5 V drive available • Low on-state resistance ⎯ RDS(on)1 = 17.5 mΩ MAX. (VGS .

Features

a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features
• 2.5 V drive available
• Low on-state resistance ⎯ RDS(on)1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) ⎯ RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) ⎯ RDS(on)3 = 22.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A) ⎯ RDS(on)4 = 27.5 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD Ordering Information Part No. μ PA2460T1Q-E1-AX ∗1 LEAD PLATING Ni/Pd/Au PACKING 8 mm embossed taping Package 8-pin HUSON (2720) 30.