UP04979 - Panasonic

UP04979 MOSFET

This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching (0.30) 654 0.20+–00..0025 Unit: mm 0.10±0.02 1.20±0.05 1.60±0.05 (0.20) (0.20) / Product0ltiof0e.0c2yclennuaen ■ Features • High-speed switching • Gate protection diode built-in • T.

Features

• High-speed switching
• Gate protection diode built-in
• Two elements incorporated into one package (Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SJ0672 + 2SK3539
■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Tr1 Drain-source surrender voltage VDSS 50 Gate-source voltage (Drain open) VGSO ±7 Drain current Peak drain current Tr2 Drain-source surrender voltage ID IDP VDSS 100 200 −30 Gate-source voltage (Drain open) VGSO ±7 Overall Drain current Peak drain current Total power dissipation
* Ju.