UP04315 - Panasonic Semiconductor

UP04315 Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type

Composite Transistors UP04315 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits 6 (0.30) 5 4 0.20+0.05 –0.02 Unit: mm 0.10±0.02 1.20±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collecto.

Features

1.60±0.05 Publication date: June 2003 SJJ00268BED 1 UP04315
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = −10 V, IE = 1 mA, f = 200 MHz.