UN8231 - Panasonic Semiconductor

UN8231 Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.15 For switching 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. q 0.45–0.05 +0.1 Parameter Collector to base voltage UN8231 UN8231A Symbol VCBO VCEO ICP IC PT* Tj Tstg Ratings 20 60 20 50 1.5 0.7 1 150 –55 to +150 Unit V UN8231 Collecto.

Features

0.5 4.5±0.1 V Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio Transition frequency 1 Transistors with built-in Resistor PT — Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 0 0 2 4 6 8 10 12 1.2 UN8231/UN8231A IC — VCE 100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=100 Total power dissipation PT (W) Collector current IC (A) Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. 1.0 IB=1.2mA 1.0mA 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C
  –25˚C 0.