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Circuit Protector Elements UNH0120 (UN11020) Circuit Protector Elements Unit: mm For overcurrent protection (0.4) (1.5) 6.9±0.1 (1.5) 2.5±0.1 (1.0) 3.5±0.1 0.5 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter Operating ambient temperature Storage temperature Symbol Topr Tstg Rating −55 to +125 −55 to +125 Unit °C °C 1 1.0±0.1 (0.85) 2.4±0.2 0.4.
(1.0) 1 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UN1110 |
Panasonic Semiconductor |
Silicon PNP transistor |
|
| 2 | UN1111 |
Panasonic Semiconductor |
Silicon PNP transistor |
|
| 3 | UN1112 |
Panasonic Semiconductor |
Silicon PNP transistor |
|
| 4 | UN1113 |
Panasonic Semiconductor |
Silicon PNP transistor |
|
| 5 | UN1114 |
Panasonic Semiconductor |
Silicon PNP transistor |
|
| 6 | UN1115 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 7 | UN1116 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 8 | UN1117 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 9 | UN1118 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 10 | UN1119 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 11 | UN111D |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|
| 12 | UN111E |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor |
|