The UMX5601 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength (3T and greater) MR scanners. These PIN diodes produce the minimum artifacts (magnetic field distortions) available in the industry, today. The diodes have been tested in magnetic fields of ±7 Tesla. T.
uirements per EU Directive 2002/95/EC. IMPORTANT: Forthemostcurrentdata,consult MICROSEMI’s website: www.microsemi.com
TM
KEY FEATURE S
Ultra low magnetic construction
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SOGO passivated chip
Thermally matched configuration
RoHS compliant
1
Low capacitance at 0 V bias
Low conductance at 0 V bias
Metallurgical bond
Fused-in-glass construction
Non cavity design
Available in surface mount package.
Compatible with automatic insertion equipment
ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED)
Rating Symbol Value Unit
Peak Repetitive Reverse V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UMX502 |
Microchip |
MELF PIN Diodes | |
2 | UMX504 |
Microchip |
MELF PIN Diodes | |
3 | UMX508 |
Microchip |
MELF PIN Diodes | |
4 | UMX509 |
Microchip |
MELF PIN Diodes | |
5 | UMX5101 |
Microsemi |
ULTRA LOW MAGNETIC MOMENT PIN DIODE | |
6 | UMX512 |
Microchip |
MELF PIN Diodes | |
7 | UMX5N |
Rohm |
Dual Transistor | |
8 | UMX1089 |
Microsemi |
LOW LOSS MRI PROTECTION DIODES | |
9 | UMX18N |
Rohm |
Dual Transistor | |
10 | UMX18N |
SeCoS |
dual transistors | |
11 | UMX1N |
Rohm |
Dual Transistor | |
12 | UMX1N |
SeCoS |
Dual NPN General Purpose Transistors |