Qorvo's UJ4N075004L8S is a 750 V, 4.3mW high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package, making it an ideal fit to address the challenging thermal and space constraints of solid-state circuit breakers and relay applications. Additionally, the JFET is a robust device tech.
w Single digit on-resistance in a TOLL SMD package w Operating temperature: 175°C (max) w High pulse current capability w Excellent device robustness w Silver-sintered die attach for excellent thermal resistance w Short circuit rated w RoHS compliant Typical applications w Solid State / Semiconductor Circuit Breaker w Solid State / Semiconductor Relay w Battery Disconnects w Surge Protection w Inrush Current Control Datasheet: UJ4N075004L8S Rev. B, June 2024 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 2 Pulsed drain current 3 Short circuit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UJ4C075018K3S |
UnitedSiC |
SiC FET | |
2 | UJ4C075033K3S |
UnitedSiC |
SiC FET | |
3 | UJ4C075033K4S |
UnitedSiC |
SiC FET | |
4 | UJ4C075044B7S |
Qorvo |
SiC FET | |
5 | UJ4C075044L8S |
Qorvo |
SiC FET | |
6 | UJ4SC075018B7S |
Qorvo |
SiC FET | |
7 | UJ0100 |
Unisonic Technologies |
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER | |
8 | UJ2D1205T |
UnitedSiC |
1200V SiC Schottky Diode | |
9 | UJ2D1210T |
UnitedSiC |
1200V SiC Schottky Diode | |
10 | UJ2D1230K |
UnitedSiC |
1200V SiC Schottky Diode | |
11 | UJ3C065030B3 |
UnitedSiC |
MOSFET | |
12 | UJ3C065030K3S |
UnitedSiC |
MOSFET |