UJ4C075044L8S - Qorvo

UJ4C075044L8S SiC FET

The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si.

Features

w On-resistance RDS(on): 44mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 89nC w Low body diode VFSD: 1.2V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TOLL package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Induction heating Datasheet: UJ4C075044L8S Rev. C, November 2023 1 Maximum Ratings Parameter Drain-source voltage.