Bipolar Transistors Silicon NPN Triple-Diffused Type TTC5460B 1. Applications • Dynamic Focus • High-Voltage Switching • High-Voltage Amplifiers 2. Features (1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does no.
(1) High collector voltage : VCEO = 800 V 3. Packaging and Internal Circuit (Note) TTC5460B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial production 2014-02 2016-02-05 Rev.1.0 TTC5460B 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TTC5200 |
Toshiba |
Silicon NPN Transistor | |
2 | TTC5200 |
Nell |
Silicon NPN Transistor | |
3 | TTC5200 |
INCHANGE |
NPN Transistor | |
4 | TTC |
ETC |
NTC Thermistors | |
5 | TTC-005 |
TKS |
Power Thermistor | |
6 | TTC-010 |
TKS |
Power Thermistor | |
7 | TTC-015 |
TKS |
Power Thermistor | |
8 | TTC-02 |
ETC |
Telecommunication Coupling Transformer | |
9 | TTC-020 |
TKS |
Power Thermistor | |
10 | TTC-025 |
TKS |
Power Thermistor | |
11 | TTC-045 |
TKS |
Power Thermistor | |
12 | TTC-050 |
TKS |
Power Thermistor |