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TTC5200 - Toshiba

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TTC5200 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 TTC5200 ○ Power Amplifier Applications • High collector voltage: VCEO = 230 V (min) • Complementary to TTA1943 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collect.

Features

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-03 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter vol.

The same part from a different manufacturer

Datasheet TTC5200 - INCHANGE TTC5200

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type TTA1943 ·Minimum Lot-to-Lot variati.

Datasheet TTC5200 - Nell TTC5200

SEMICONDUCTOR TTC5200 Silicon NPN triple diffusion planar transistor 15A/230V/150W RoHS RoHS Nell High Power Products.

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