TSUS6202 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 15° • Low forward voltage • Suitable for high pulse current operation • Good spectral.
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 15°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT TSUS6202
Ie (mW/sr) 30
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg) ± 15
λP (nm) 950
tr (ns) 800
ORDERI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSUS6402 |
Vishay |
Infrared Emitting Diode | |
2 | TSUS4300 |
Vishay Telefunken |
Infrared Emitting Diode | |
3 | TSUS4400 |
Vishay Telefunken |
GaAs Infrared Emitting Diode in 3 mm (T-1) Package | |
4 | TSUS520 |
Vishay Telefunken |
GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package | |
5 | TSUS5200 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
6 | TSUS5201 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
7 | TSUS5202 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
8 | TSUS540 |
Vishay Telefunken |
GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package | |
9 | TSUS5400 |
Vishay Siliconix |
GaAs Infrared Emitting Diodes in 5 mm (T1) Package | |
10 | TSUS5400 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode | |
11 | TSUS5401 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode | |
12 | TSUS5402 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode |