TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. 94 8390 Features D Low cost emitter D Low forward voltage D High radiant power and radiant intensity D Suitable for DC and high pulse current op.
D Low cost emitter D Low forward voltage D High radiant power and radiant intensity D Suitable for DC and high pulse current operation D Standard T
–1¾ (ø 5 mm) package D Comfortable angle of half intensity ϕ = ± 22° D Peak wavelength l p = 950 nm D High reliability D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak For.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSUS5400 |
Vishay Siliconix |
GaAs Infrared Emitting Diodes in 5 mm (T1) Package | |
2 | TSUS5400 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode | |
3 | TSUS5401 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode | |
4 | TSUS5402 |
Vishay Siliconix |
(TSUS5400 - TSUS5402) Infrared Emitting Diode | |
5 | TSUS520 |
Vishay Telefunken |
GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package | |
6 | TSUS5200 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
7 | TSUS5201 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
8 | TSUS5202 |
Vishay Siliconix |
(TSUS5200 - TSUS5202) Infrared Emitting Diode | |
9 | TSUS4300 |
Vishay Telefunken |
Infrared Emitting Diode | |
10 | TSUS4400 |
Vishay Telefunken |
GaAs Infrared Emitting Diode in 3 mm (T-1) Package | |
11 | TSUS6202 |
Vishay |
Infrared Emitting Diode | |
12 | TSUS6402 |
Vishay |
Infrared Emitting Diode |