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This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually.
■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS
Absolute Maximum.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSP5N60S |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSP5N65M |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSP5070FN |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION |
|
| 4 | TSP5070FNTR |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION |
|
| 5 | TSP5071N |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION |
|
| 6 | TSP50N06M |
Truesemi |
N-Channel MOSFET |
|
| 7 | TSP50R140S1 |
Truesemi |
N-Channel MOSFET |
|
| 8 | TSP50R240S1 |
Truesemi |
N-Channel MOSFET |
|
| 9 | TSP50R380S1 |
Truesemi |
N-Channel MOSFET |
|
| 10 | TSP50R550S1 |
Truesemi |
N-Channel MOSFET |
|
| 11 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|
| 12 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |
|