This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 50A, 60V, RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 33nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G
●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP5070FN |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION | |
2 | TSP5070FNTR |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION | |
3 | TSP5071N |
STMicroelectronics |
PROGRAMMABLE CODEC/FILTER COMBO 2ND GENERATION | |
4 | TSP50R140S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSP50R240S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSP50R380S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSP50R550S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSP5N60M |
Truesemi |
600V N-Channel MOSFET | |
9 | TSP5N60S |
Truesemi |
N-Channel MOSFET | |
10 | TSP5N65M |
Truesemi |
N-Channel MOSFET | |
11 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
12 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |