TSM120N10PQ56 - Taiwan Semiconductor

TSM120N10PQ56 N-Channel Power MOSFET

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Features

● Low On-Resistance
● Low Input Capacitance
● Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram N-Channel MOSFET Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Drain Current-Pulsed (Note 1) Single Pulse Avalanche Energy, L=0.5mH Maximum Power Dissipat.