TSM120N06LCR - Taiwan Semiconductor

TSM120N06LCR N-Channel Power MOSFET

TSM120N06LCR Taiwan Semiconductor N-Channel Power MOSFET 60V, 54A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS P.

Features

● Low RDS(ON) to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 60 12 15 18 V mΩ nC APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise.