This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 7A,650V,Max.RDS(on)=1.60Ω @ VGS =10V
• Low gate charge(typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF7N60M |
Truesemi |
N-Channel MOSFET | |
2 | TSF7N60S |
Truesemi |
N-Channel MOSFET | |
3 | TSF7N80M |
Truesemi |
N-Channel MOSFET | |
4 | TSF70R1K1S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSF70R210S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSF70R340S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSF70R450S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSF70R750S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSF730M |
Truesemi |
N-Channel MOSFET | |
10 | TSF740M |
Truesemi |
N-Channel MOSFET | |
11 | TSF-6522 |
ETC |
No-Clean Tacky Soldering Flux | |
12 | TSF05A20 |
Nihon Inter Electronics |
FRD |