SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET .
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.77Ω
• Ultra Low Gate Charge (typ. Qg =
15nC)
• 100% avalanche tested
• Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
TSD5N60S
5
* 4.5
*
IDM Drain Current - Pulsed
(Note 1)
20
*
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF5N60M |
Truesemi |
600V N-Channel MOSFET | |
2 | TSF5N65M |
Truesemi |
N-Channel MOSFET | |
3 | TSF50N06M |
Truesemi |
N-Channel MOSFET | |
4 | TSF50R140S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSF50R240S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSF50R380S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSF50R550S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSF-6522 |
ETC |
No-Clean Tacky Soldering Flux | |
9 | TSF05A20 |
Nihon Inter Electronics |
FRD | |
10 | TSF05A20-11A |
Nihon Inter Electronics |
FRED | |
11 | TSF05A40 |
Nihon Inter Electronics |
FRD | |
12 | TSF05A40-11A |
Nihon Inter Electronics |
FRED |