This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V
• Low gate charge(typical 22nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR IAR PD TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive avalanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF18N50M |
Truesemi |
N-Channel MOSFET | |
2 | TSF18N50MR |
Truesemi |
N-Channel MOSFET | |
3 | TSF18N60MR |
Truesemi |
N-Channel MOSFET | |
4 | TSF1842D50-S9 |
Token |
Saw Filters | |
5 | TSF1855D00-S9 |
Token |
Saw Filters | |
6 | TSF10H100C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
7 | TSF10H120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
8 | TSF10H150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
9 | TSF10H200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSF10N60C |
Thinki Semiconductor |
600V Insulated N-Channel Type Power MOSFET | |
11 | TSF10N60M |
Truesemi |
600V N-Channel MOSFET | |
12 | TSF10N60S |
Truesemi |
N-Channel MOSFET |