This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
• Low gate charge ( typical 48nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G
●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Diss.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF10N60C |
Thinki Semiconductor |
600V Insulated N-Channel Type Power MOSFET | |
2 | TSF10N60S |
Truesemi |
N-Channel MOSFET | |
3 | TSF10N65M |
Truesemi |
N-Channel MOSFET | |
4 | TSF10N80M |
Truesemi |
N-Channel MOSFET | |
5 | TSF10H100C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
6 | TSF10H120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
7 | TSF10H150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
8 | TSF10H200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
9 | TSF10U60C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSF110D00A-S4 |
Token |
Saw Filters | |
11 | TSF110D00B-S1 |
Token |
Saw Filters | |
12 | TSF110D00C-S1 |
Token |
Saw Filters |