TSF11N60S - Truesemi

TSF11N60S N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.

Features

• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.38Ω
• Ultra Low Gate Charge (typ. Qg = 35nC)
• 100% avalanche tested
• Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB11N60S 11
* 8.5
* IDM Drain Current - Pulsed (Note 1) 40
* VGSS Gate-Source voltage EAS .