This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characterist.
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► Low threshold (-2.4V max.)
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► High input impedance
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► Low input capacitance (85pF typical)
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► Fast switching speeds
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► Low on-resistance
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► Free from secondary breakdown
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► Low input and output leakage
Applications
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► Logic level interfaces - ideal for TTL and CMOS
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► Solid state relays
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► Battery operated systems
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► Photo voltaic drives
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► Analog switches
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► General purpose line drivers
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► Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. Thi.
The TP0620 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven si.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TP0602 |
Supertex |
P-Channel MOSFET | |
2 | TP0602 |
Premo |
MICRO SMD HARD FERRITE TRANSPONDER INDUCTOR | |
3 | TP0602-TC |
Premo |
Micro SMD Hard Ferrite Telecoil | |
4 | TP0604 |
Microchip |
P-Channel Vertical DMOS FET | |
5 | TP0604 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | TP0604WG |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
7 | TP0606 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
8 | TP0606N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
9 | TP0606N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
10 | TP0610 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
11 | TP0610E |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors | |
12 | TP0610K |
Vishay Siliconix |
P-Channel 60-V (D-S) MOSFET |