The TP0604 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of al.
•
–2.4V Maximum Low Threshold
• High Input Impedance
• Low Input Capacitance (95 pF)
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage
Applications
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photovoltaic Drives
• Analog Switches
• General Purpose Line Drivers
• Telecommunication Switches
General Description
The TP0604 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produ.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-pr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TP0602 |
Supertex |
P-Channel MOSFET | |
2 | TP0602 |
Premo |
MICRO SMD HARD FERRITE TRANSPONDER INDUCTOR | |
3 | TP0602-TC |
Premo |
Micro SMD Hard Ferrite Telecoil | |
4 | TP0604WG |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
5 | TP0606 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | TP0606N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
7 | TP0606N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
8 | TP0610 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
9 | TP0610E |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors | |
10 | TP0610K |
Vishay Siliconix |
P-Channel 60-V (D-S) MOSFET | |
11 | TP0610KL |
Vishay |
P-Channel MOSFET | |
12 | TP0610L |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |